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FQAF10N80 データシート(PDF) 1 Page - Fairchild Semiconductor |
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FQAF10N80 データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2002 Fairchild Semiconductor Corporation Rev. A1, April 2002 QFETTM FQAF10N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. Features • 6.7A, 800V, RDS(on) = 1.05Ω @VGS = 10 V • Low gate charge ( typical 55 nC) • Low Crss ( typical 24 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQAF10N80 Units VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C) 6.7 A - Continuous (TC = 100°C) 4.24 A IDM Drain Current - Pulsed (Note 1) 26.8 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 920 mJ IAR Avalanche Current (Note 1) 6.7 A EAR Repetitive Avalanche Energy (Note 1) 11.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns PD Power Dissipation (TC = 25°C) 113 W - Derate above 25°C 0.91 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 1.1 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ S D G TO-3PF FQAF Series GS D |
同様の部品番号 - FQAF10N80 |
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同様の説明 - FQAF10N80 |
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