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FM22LD16 データシート(PDF) 1 Page - Cypress Semiconductor

部品番号 FM22LD16
部品情報  4Mbit F-RAM Memory
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メーカー  CYPRESS [Cypress Semiconductor]
ホームページ  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM22LD16 データシート(HTML) 1 Page - Cypress Semiconductor

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This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s
internal qualification testing and has reached production status.
Cypress Semiconductor Corporation
198 Champion Court
San Jose, CA 95134-1709
408-943-2600
Document Number: 001-86190 Rev. **
Revised February 25, 2013
FM22LD16
4Mbit F-RAM Memory
Features
4Mbit Ferroelectric Nonvolatile RAM
Organized as 256Kx16
Configurable as 512Kx8 Using /UB, /LB
10
14 Read/Write Cycles
NoDelay™ Writes
Page Mode Operation to 40MHz
Advanced High-Reliability Ferroelectric Process
SRAM Compatible
JEDEC 256Kx16 SRAM Pinout
55 ns Access Time, 110 ns Cycle Time
Advanced Features
Software Programmable Block Write Protect
Superior to Battery-backed SRAM Modules
No Battery Concerns
Monolithic Reliability
True Surface Mount Solution, No Rework Steps
Superior for Moisture, Shock, and Vibration
Low Power Operation
2.7V – 3.6V Power Supply
Low Standby Current (90µA typ.)
Low Active Current (8 mA typ.)
Industry Standard Configuration
Industrial Temperature -40 C to +85 C
48-ball “Green”/RoHS FBGA package
Pin compatible with FM21LD16 (2Mb) and
FM23MLD16 (8Mb)
Description
The FM22LD16 is a 256Kx16 nonvolatile memory
that reads and writes like a standard SRAM. A
ferroelectric random access memory or F-RAM is
nonvolatile, which means that data is retained after
power is removed. It provides data retention for over
10 years while eliminating the reliability concerns,
functional
disadvantages,
and
system
design
complexities of battery-backed SRAM (BBSRAM).
Fast write timing and high write endurance make the
F-RAM superior to other types of memory.
In-system operation of the FM22LD16 is very similar
to other RAM devices and can be used as a drop-in
replacement for standard SRAM. Read and write
cycles may be triggered by /CE or simply by
changing the address. The F-RAM memory is
nonvolatile due to its unique ferroelectric memory
process. These features make the FM22LD16 ideal
for
nonvolatile
memory
applications
requiring
frequent or rapid writes in the form of an SRAM.
The FM22LD16 includes a low voltage monitor that
blocks access to the memory array when VDD drops
below VDD min. The memory is protected against an
inadvertent access and data corruption under this
condition.
The
device
also
features
software-
controlled write protection. The memory array is
divided into 8 uniform blocks, each of which can be
individually write protected.
The device is available in a 48-ball FBGA package.
Device specifications are guaranteed over industrial
temperature range –40°C to +85°C.
Pin Configuration
/LB
/OE
A0
A1
A2
NC
DQ8
/UB
A3
A4
/CE
DQ0
DQ9
DQ10
A5
A6
DQ1
DQ2
VSS
DQ11
A17
A7
DQ3
VDD
VDD
DQ12
NC
A16
DQ4
VSS
DQ14
DQ13
A14
A15
DQ5
DQ6
DQ15
NC
A12
A13
/WE
DQ7
NC
A8
A9
A10
A11
NC
1
2
3
4
5
6
A
B
C
D
E
F
G
H
Top View (Ball Down)
Ordering Information
FM22LD16-55-BG
55 ns access, 48-ball
“Green”/RoHS FBGA
FM22LD16-55-BGTR
55 ns access, 48-ball
“Green”/RoHS FBGA,
Tape & Reel


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