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FM22LD16-55-BG データシート(PDF) 1 Page - Cypress Semiconductor |
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FM22LD16-55-BG データシート(HTML) 1 Page - Cypress Semiconductor |
1 / 15 page This product conforms to specifications per the terms of the Ramtron standard warranty. The product has completed Ramtron’s internal qualification testing and has reached production status. Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Document Number: 001-86190 Rev. ** Revised February 25, 2013 FM22LD16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM Organized as 256Kx16 Configurable as 512Kx8 Using /UB, /LB 10 14 Read/Write Cycles NoDelay™ Writes Page Mode Operation to 40MHz Advanced High-Reliability Ferroelectric Process SRAM Compatible JEDEC 256Kx16 SRAM Pinout 55 ns Access Time, 110 ns Cycle Time Advanced Features Software Programmable Block Write Protect Superior to Battery-backed SRAM Modules No Battery Concerns Monolithic Reliability True Surface Mount Solution, No Rework Steps Superior for Moisture, Shock, and Vibration Low Power Operation 2.7V – 3.6V Power Supply Low Standby Current (90µA typ.) Low Active Current (8 mA typ.) Industry Standard Configuration Industrial Temperature -40 C to +85 C 48-ball “Green”/RoHS FBGA package Pin compatible with FM21LD16 (2Mb) and FM23MLD16 (8Mb) Description The FM22LD16 is a 256Kx16 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. In-system operation of the FM22LD16 is very similar to other RAM devices and can be used as a drop-in replacement for standard SRAM. Read and write cycles may be triggered by /CE or simply by changing the address. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM22LD16 ideal for nonvolatile memory applications requiring frequent or rapid writes in the form of an SRAM. The FM22LD16 includes a low voltage monitor that blocks access to the memory array when VDD drops below VDD min. The memory is protected against an inadvertent access and data corruption under this condition. The device also features software- controlled write protection. The memory array is divided into 8 uniform blocks, each of which can be individually write protected. The device is available in a 48-ball FBGA package. Device specifications are guaranteed over industrial temperature range –40°C to +85°C. Pin Configuration /LB /OE A0 A1 A2 NC DQ8 /UB A3 A4 /CE DQ0 DQ9 DQ10 A5 A6 DQ1 DQ2 VSS DQ11 A17 A7 DQ3 VDD VDD DQ12 NC A16 DQ4 VSS DQ14 DQ13 A14 A15 DQ5 DQ6 DQ15 NC A12 A13 /WE DQ7 NC A8 A9 A10 A11 NC 1 2 3 4 5 6 A B C D E F G H Top View (Ball Down) Ordering Information FM22LD16-55-BG 55 ns access, 48-ball “Green”/RoHS FBGA FM22LD16-55-BGTR 55 ns access, 48-ball “Green”/RoHS FBGA, Tape & Reel |
同様の部品番号 - FM22LD16-55-BG |
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同様の説明 - FM22LD16-55-BG |
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