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FM24C16B データシート(PDF) 7 Page - Cypress Semiconductor

部品番号 FM24C16B
部品情報  16Kb Serial 5V F-RAM Memory
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メーカー  CYPRESS [Cypress Semiconductor]
ホームページ  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM24C16B データシート(HTML) 7 Page - Cypress Semiconductor

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FM24C16B - 16Kb 5V I2C F-RAM
Document Number: 001-84450 Rev. *A
Page 7 of 13
S
A
Slave Address
1
Data Byte
1
P
By Master
By FM24C16B
Start
Address
Stop
Acknowledge
No
Acknowledge
Data
Figure 7. Current Address Read
S
A
Slave Address
1
Data Byte
1 P
By Master
By FM24C16B
Start
Address
Stop
Acknowledge
No
Acknowledge
Data
Data Byte
A
Acknowledge
Figure 8. Sequential Read
S
A
Slave Address
1
Data Byte
1 P
By Master
By FM24C16B
Start
Address
Stop
No
Acknowledge
Data
Data Byte
A
Acknowledge
S
A
Slave Address
0
Word Address
A
Start
Address
Acknowledge
Figure 9. Selective (Random) Read
Endurance
The FM24C16B internally operates with a read and
restore mechanism. Therefore, endurance cycles are
applied for each read or write cycle. The memory
architecture is based on an array of rows and
columns. Each read or write access causes an
endurance cycle for an entire row. In the FM24C16B,
a row is 64 bits wide. Every 8-byte boundary marks
the beginning of a new row. Endurance can be
optimized by ensuring frequently accessed data is
located in different rows. Regardless, FRAM read
and write endurance is effectively unlimited at the
1MHz two-wire speed. Even at 3000 accesses per
second to the same row, 10 years time will elapse
before 1 trillion endurance cycles occur.


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