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FM24CL16B-GTR データシート(PDF) 5 Page - Cypress Semiconductor

部品番号 FM24CL16B-GTR
部品情報  16Kb Serial 3V F-RAM Memory
Download  14 Pages
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メーカー  CYPRESS [Cypress Semiconductor]
ホームページ  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM24CL16B-GTR データシート(HTML) 5 Page - Cypress Semiconductor

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FM24CL16B - 16Kb 3V I2C F-RAM
Document Number: 001-84456 Rev. *A
Page 5 of 14
1
0
1
0
A2
A1
A0
R/W
Slave ID
Page
Select
Figure 4. Slave Address
Word Address
After the FM24CL16B (as receiver) acknowledges
the slave ID, the master will place the word address
on the bus for a write operation. The word address is
the lower 8-bits of the address to be combined with
the 3-bits of the page select to specify the exact byte
to be written. The complete 11-bit address is latched
internally.
No word address occurs for a read operation, though
the 3-bit page select is latched internally. Reads
always use the lower 8-bits that are held internally in
the address latch. That is, reads always begin at the
address following the previous access. A random read
address can be loaded by doing a write operation as
explained below.
After transmission of each data byte, just prior to the
acknowledge,
the
FM24CL16B
increments
the
internal address latch. This allows the next sequential
byte to be accessed with no additional addressing.
After the last address (7FFh) is reached, the address
latch will roll over to 000h. There is no limit on the
number of bytes that can be accessed with a single
read or write operation.
Data Transfer
After all address information has been transmitted,
data transfer between the bus master and the
FM24CL16B can begin. For a read operation the
device will place 8 data bits on the bus then wait for
an acknowledge. If the acknowledge occurs, the next
sequential
byte
will
be
transferred.
If
the
acknowledge is not sent, the read operation is
concluded. For a write operation, the FM24CL16B
will accept 8 data bits from the master then send an
acknowledge. All data transfer occurs MSB (most
significant bit) first.
Memory Operation
The FM24CL16B is designed to operate in a manner
very similar to other 2-wire interface memory
products. The major differences result from the
higher performance write capability of FRAM
technology. These improvements result in some
differences between the FM24CL16B and a similar
configuration EEPROM during writes. The complete
operation for both writes and reads is explained
below.
Write Operation
All writes begin with a slave ID then a word address
as previously mentioned. The bus master indicates a
write operation by setting the LSB of the Slave
Address to a 0. After addressing, the bus master
sends each byte of data to the memory and the
memory generates an acknowledge condition. Any
number of sequential bytes may be written. If the
end of the address range is reached internally, the
address counter will wrap from 7FFh to 000h.
Unlike other nonvolatile memory technologies, there
is no write delay with FRAM. The entire memory
cycle occurs in less time than a single bus clock.
Therefore, any operation including read or write can
occur immediately following a write. Acknowledge
polling, a technique used with EEPROMs to
determine if a write is complete is unnecessary and
will always return a „ready‟ condition.
An actual memory array write occurs after the 8
th
data bit is transferred. It will be complete before the
acknowledge is sent. Therefore, if the user desires to
abort a write without altering the memory contents,
this should be done using start or stop condition
prior to the 8
th data bit. The FM24CL16B needs no
page buffering.
The memory array can be write protected using the
WP pin. Pulling WP high will disable writes to the
entire array. The FM24CL16B will not acknowledge
data bytes that are written to protected addresses. In
addition, the address counter will not increment if
writes are attempted to these addresses. Pulling WP
low (VSS) will deactivate this feature.
Figure 5 and 6 below illustrates both a single-byte
and multiple-byte writes.


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