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FM1808B データシート(PDF) 1 Page - Cypress Semiconductor

部品番号 FM1808B
部品情報  256Kb Bytewide 5V F-RAM Memory
Download  12 Pages
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メーカー  CYPRESS [Cypress Semiconductor]
ホームページ  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM1808B データシート(HTML) 1 Page - Cypress Semiconductor

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Pre-Production
This is a product in the pre-production phase of development. Device characterization is complete and Ramtron does not expect to
change the specifications. Ramtron will issue a Product Change Notice if any specification changes are made.
Cypress Semiconductor Corporation
198 Champion Court
San Jose, CA 95134-1709
408-943-2600
Document Number: 001-86209 Rev. **
Revised February 25, 2013
FM1808B
256Kb Bytewide 5V F-RAM Memory
Features
256Kbit Ferroelectric Nonvolatile RAM
Organized as 32,768 x 8 bits
High Endurance 1 Trillion (10
12) Read/Writes
38 year Data Retention (@ 75°C)
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Superior to BBSRAM Modules
No Battery Concerns
Monolithic Reliability
True Surface Mount Solution, No Rework Steps
Superior for Moisture, Shock, and Vibration
Resistant to Negative Voltage Undershoots
SRAM & EEPROM Compatible
JEDEC 32Kx8 SRAM & EEPROM pinout
70 ns Access Time
130 ns Cycle Time
Low Power Operation
15 mA Active Current
25 A (typ.) Standby Current
Industry Standard Configuration
Industrial Temperature -40 C to +85 C
28-pin “Green”/RoHS SOIC Package
Description
The FM1808B is a 256-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile but operates in other respects as a RAM.
It provides data retention for 38 years while
eliminating
the
reliability
concerns,
functional
disadvantages and system design complexities of
battery-backed SRAM (BBSRAM). Fast write timing
and high write endurance make F-RAM superior to
other types of nonvolatile memory.
In-system operation of the FM1808B is very similar
to other RAM devices. Minimum read- and write-
cycle times are equal. The F-RAM memory, however,
is nonvolatile due to its unique ferroelectric memory
process. Unlike BBSRAM, the FM1808B is a truly
monolithic nonvolatile memory. It provides the same
functional benefits of a fast write without the
disadvantages associated with modules and batteries
or hybrid memory solutions.
These capabilities make the FM1808B ideal for
nonvolatile memory applications requiring frequent
or rapid writes in a bytewide environment. The
availability of a true surface-mount package improves
the
manufacturability
of
new
designs.
Device
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
Pin Configuration
Ordering Information
FM1808B-SG
28-pin “Green”/RoHS SOIC
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
DQ3
DQ4
DQ5
DQ6
DQ7
CE
A10
OE
A11
A9
A8
A13
WE
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15


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