データシートサーチシステム |
|
FM1808B-SG データシート(PDF) 1 Page - Cypress Semiconductor |
|
FM1808B-SG データシート(HTML) 1 Page - Cypress Semiconductor |
1 / 12 page Pre-Production This is a product in the pre-production phase of development. Device characterization is complete and Ramtron does not expect to change the specifications. Ramtron will issue a Product Change Notice if any specification changes are made. Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Document Number: 001-86209 Rev. ** Revised February 25, 2013 FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 1 Trillion (10 12) Read/Writes 38 year Data Retention (@ 75°C) NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules No Battery Concerns Monolithic Reliability True Surface Mount Solution, No Rework Steps Superior for Moisture, Shock, and Vibration Resistant to Negative Voltage Undershoots SRAM & EEPROM Compatible JEDEC 32Kx8 SRAM & EEPROM pinout 70 ns Access Time 130 ns Cycle Time Low Power Operation 15 mA Active Current 25 A (typ.) Standby Current Industry Standard Configuration Industrial Temperature -40 C to +85 C 28-pin “Green”/RoHS SOIC Package Description The FM1808B is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. It provides data retention for 38 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make F-RAM superior to other types of nonvolatile memory. In-system operation of the FM1808B is very similar to other RAM devices. Minimum read- and write- cycle times are equal. The F-RAM memory, however, is nonvolatile due to its unique ferroelectric memory process. Unlike BBSRAM, the FM1808B is a truly monolithic nonvolatile memory. It provides the same functional benefits of a fast write without the disadvantages associated with modules and batteries or hybrid memory solutions. These capabilities make the FM1808B ideal for nonvolatile memory applications requiring frequent or rapid writes in a bytewide environment. The availability of a true surface-mount package improves the manufacturability of new designs. Device specifications are guaranteed over an industrial temperature range of -40°C to +85°C. Pin Configuration Ordering Information FM1808B-SG 28-pin “Green”/RoHS SOIC A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6 DQ7 CE A10 OE A11 A9 A8 A13 WE VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 |
同様の部品番号 - FM1808B-SG |
|
同様の説明 - FM1808B-SG |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |