©2000 Fairchild Semiconductor International

May 2000

Rev. A, May 2000

QFET

QFET

QFET

FQD1N50B / FQU1N50B

500V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply, power

factor correction, electronic lamp ballast based on half

bridge.

Features

• Low gate charge ( typical 4.0 nC)

• Low Crss ( typical 3.0 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Thermal Characteristics

Symbol

Parameter

FQD1N50 / FQU1N50

Units

Drain-Source Voltage

500

V

Drain Current

1.1

A

0.7

A

Drain Current

- Pulsed

(Note 1)

4.4

A

Gate-Source Voltage

± 30

V

Single Pulsed Avalanche Energy

(Note 2)

80

mJ

Avalanche Current

(Note 1)

1.1

A

Repetitive Avalanche Energy

(Note 1)

2.5

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

2.5

W

25

W

- Derate above 25°C

0.2

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

Typ

Max

Units

Thermal Resistance, Junction-to-Case

--

5.0

°C/W

Thermal Resistance, Junction-to-Ambient *

--

50

°C/W

Thermal Resistance, Junction-to-Ambient

--

110

°C/W

* When mounted on the minimum pad size recommended (PCB Mount)

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S

D

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I-PAK

FQU Series

D-PAK

FQD Series

G

S

D

G

S

D