データシートサーチシステム |
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FQD2P40 データシート(PDF) 3 Page - Fairchild Semiconductor |
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FQD2P40 データシート(HTML) 3 Page - Fairchild Semiconductor |
3 / 9 page ©2000 Fairchild Semiconductor International Rev. A2, December 2000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 10 -1 10 0 150℃ ※ Notes : 1. V GS = 0V 2. 250μs Pulse Test 25℃ -V SD , Source-Drain Voltage [V] 24 68 10 10 -1 10 0 150℃ 25℃ -55℃ ※ Notes : 1. V DS = -50V 2. 250μs Pulse Test -V GS , Gate-Source Voltage [V] 10 -1 10 0 10 1 10 -2 10 -1 10 0 V GS Top : -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V ※ Notes : 1. 250μs Pulse Test 2. T C = 25 ℃ -V DS, Drain-Source Voltage [V] 024 68 10 12 0 2 4 6 8 10 12 V DS = -200V V DS = -80V V DS = -320V ※ Note : I D = -2.0 A Q G , Total Gate Charge [nC] 10 -1 10 0 10 1 0 100 200 300 400 500 600 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd ※ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss -V DS , Drain-Source Voltage [V] 01 234 56 4 6 8 10 12 ※ Note : T J = 25 ℃ V GS = - 20V V GS = - 10V -I D , Drain Current [A] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics |
同様の部品番号 - FQD2P40 |
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同様の説明 - FQD2P40 |
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