N0439N datasheet(2/7 Pages) RENESAS

部品番号	N0439N

部品情報	N-channel MOSFET 40 V, 90 A, 3.3 m廓

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メーカー	RENESAS [Renesas Technology Corp]

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2 / 7 page

N0439N

R07DS1065EJ0100 Rev.1.00

Page 2 of 6

Jun 13, 2013

Electrical Characteristics (TA = 25°C)

Item

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Zero Gate Voltage Drain Current

IDSS

1

μA

VDS = 40V, VGS = 0 V

Gate Leakage Current

IGSS

±100

nA

VGS =

± 20 V, VDS = 0 V

Gate to Source Threshold Voltage

VGS(th)

2.0

3.0

4.0

V

VDS = VGS, ID = 250

μA

Forward Transfer Admittance

*1

| yfs |

30

S

VDS = 5 V, ID = 45 A

Drain to Source On-state Resistance

*1

RDS(on)

2.75

3.30

m

Ω

VGS = 10 V, ID = 45 A

Input Capacitance

Ciss

3900

5850

pF

VDS = 25 V

VGS = 0 V

f = 1 MHz

Output Capacitance

Coss

530

800

pF

Reverse Transfer Capacitance

Crss

200

360

pF

Turn-on Delay Time

td(on)

25

60

ns

VDD = 20V, ID = 45 A

VGS = 10 V

RG = 0

Ω

Rise Time

tr

12

30

ns

Turn-off Delay Time

td(off)

65

130

ns

Fall Time

tf

8

20

ns

Total Gate Charge

QG

68

102

nC

VDD = 32V

VGS = 10 V

ID = 90 A

Gate to Source Charge

QGS

18

nC

Gate to Drain Charge

QGD

18

nC

Body Diode Forward Voltage

*1

VF(S-D)

0.95

1.5

V

IF = 90 A, VGS = 0 V

Reverse Recovery Time

trr

47

ns

IF = 90 A, VGS = 0 V

di/dt = 100 A/

μs

Reverse Recovery Charge

Qrr

68

nC

Note: *1. Pulsed test

TEST CIRCUIT 3 GATE CHARGE

VGS = 20

→ 0 V

PG.

RG = 25

Ω

50

Ω

D.U.T.

L

VDD

TEST CIRCUIT 1 AVALANCHE CAPABILITY

PG.

D.U.T.

RL

VDD

TEST CIRCUIT 2 SWITCHING TIME

RG

PG.

IG = 2 mA

50

Ω

D.U.T.

RL

VDD

ID

VDD

IAS

VDS

BVDSS

Starting Tch

VGS

0

τ = 1 s

Duty Cycle

≤ 1%

τ

VGS

Wave Form

VDS

Wave Form

VGS

VDS

10%

0

90%

VGS

VDS

ton

toff

td(on)

tr

td(off)

tf

10%

μ

同様の部品番号 - N0439N

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