FQP3N80 datasheet(3/8 Pages) FAIRCHILD

部品番号	FQP3N80

部品情報	800V N-Channel MOSFET

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メーカー	FAIRCHILD [Fairchild Semiconductor]

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Rev. A, September 2000

0.2

0.4

0.6

0.8

1.0

1.2

10

-1

10

0

10

1

150℃

※ Notes :

1. V

GS = 0V

2. 250μs Pulse Test

25℃

V

SD, Source-Drain voltage [V]

02

4

6

8

2

4

6

8

10

V

GS = 20V

V

GS = 10V

※ Note : T

J = 25

℃

I

D, Drain Current [A]

2

468

10

-1

10

0

10

1

150

oC

25

o

C

-55

oC

※ Notes :

1. V

DS = 50V

2. 250μs Pulse Test

V

GS, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

-2

10

-1

10

0

10

1

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom :

5.5 V

※ Notes :

1. 250μs Pulse Test

2. T

C = 25

℃

V

DS, Drain-Source Voltage [V]

0

2

4

6

8

10121416

0

2

4

6

8

10

12

V

DS = 400V

V

DS = 160V

V

DS = 640V

※ Note : I

D = 3.0A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

100

200

300

400

500

600

700

800

900

C

iss

= C

gs

+ C

gd

(C

ds

= shorted)

C

oss

= C

ds

+ C

gd

C

rss

= C

gd

※ Notes :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS

, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

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