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FQP6N45 データシート(PDF) 2 Page - Fairchild Semiconductor |
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FQP6N45 データシート(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page ©2000 Fairchild Semiconductor International (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) Rev. A1, January 2001 Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 16mH, IAS = 6.2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 6.2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 450 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.47 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 450 V, VGS = 0 V -- -- 1 µA VDS = 360 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.1 A -- 0.86 1.1 Ω gFS Forward Transconductance VDS = 50 V, ID = 3.1 A -- 4.6 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 620 810 pF Coss Output Capacitance -- 95 125 pF Crss Reverse Transfer Capacitance -- 11 15 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 225 V, ID = 6.2 A, RG = 25 Ω -- 15 40 ns tr Turn-On Rise Time -- 70 150 ns td(off) Turn-Off Delay Time -- 30 70 ns tf Turn-Off Fall Time -- 40 90 ns Qg Total Gate Charge VDS = 360 V, ID = 6.2 A, VGS = 10 V -- 16 21 nC Qgs Gate-Source Charge -- 4.3 -- nC Qgd Gate-Drain Charge -- 7.8 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 6.2 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 25 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6.2 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 6.2 A, dIF / dt = 100 A/µs -- 210 -- ns Qrr Reverse Recovery Charge -- 1.4 -- µC |
同様の部品番号 - FQP6N45 |
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同様の説明 - FQP6N45 |
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