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FQPF4P40 データシート(PDF) 2 Page - Fairchild Semiconductor |
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FQPF4P40 データシート(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page Rev. A, August 2000 (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) ©2000 Fairchild Semiconductor International Elerical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 79mH, IAS = -2.4A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -3.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -400 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- 0.36 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = -400 V, VGS = 0 V -- -- -1 µA VDS = -320 V, TC = 125°C -- -- -10 µA IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -1.2 A -- 2.44 3.1 Ω gFS Forward Transconductance VDS = -50 V, ID = -1.2 A -- 2.4 -- S Dynamic Characteristics Ciss Input Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 520 680 pF Coss Output Capacitance -- 80 105 pF Crss Reverse Transfer Capacitance -- 11 15 pF Switching Characteristics td(on) Turn-On Delay Time VDD = -200 V, ID = -3.5 A, RG = 25 Ω -- 13 35 ns tr Turn-On Rise Time -- 55 120 ns td(off) Turn-Off Delay Time -- 35 80 ns tf Turn-Off Fall Time -- 37 85 ns Qg Total Gate Charge VDS = -320 V, ID = -3.5 A, VGS = -10 V -- 18 23 nC Qgs Gate-Source Charge -- 3.8 -- nC Qgd Gate-Drain Charge -- 9.4 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -2.4 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -9.6 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.4 A -- -- -5.0 V trr Reverse Recovery Time VGS = 0 V, IS = -3.5 A, dIF / dt = 100 A/µs -- 260 -- ns Qrr Reverse Recovery Charge -- 1.4 -- µC |
同様の部品番号 - FQPF4P40 |
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同様の説明 - FQPF4P40 |
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