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FSB560A データシート(PDF) 1 Page - Fairchild Semiconductor

部品番号 FSB560A
部品情報  NPN Low Saturation Transistor
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FSB560A データシート(HTML) 1 Page - Fairchild Semiconductor

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July 1998
FSB560 / FSB560A
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 2A
continuous.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
°C
-55 to +150
Operating and Storage Junction Temperature Range
TJ, Tstg
A
2
Collector Current - Continuous
IC
V
5
Emitter-Base Voltage
VEBO
V
80
Collector-Base Voltage
VCBO
V
60
Collector-Emitter Voltage
VCEO
Units
FSB560/FSB560A
Parameter
Symbol
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
°C/W
250
Thermal Resistance, Junction to Ambient
RθJA
mW
500
Total Device Dissipation
PD
FSB560/FSB560A
Units
Max
Characteristic
Symbol
fsb560.lwpPrNA 7/1098 RevB
© 1998 Fairchild Semiconductor Corporation
SuperSOT
TM-3 (SOT-23)
C
E
B


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