FQD18N20V2TM datasheet(4/9 Pages) FAIRCHILD

部品番号	FQD18N20V2TM

部品情報	N-Channel QFET MOSFET 200 V, 15 A, 140 mOhm

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メーカー	FAIRCHILD [Fairchild Semiconductor]

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10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

※

No t e s :

1 . Z

θ

JC ( t ) =

1. 5 ℃ /W M a x .

2 . D u ty F a c t o r , D = t

1 /t 2

3 . T

JM - T C =

P

DM * Z θ JC (t )

s ing l e pu ls e

D= 0 . 5

0. 0 2

0. 2

0. 0 5

0. 1

0. 0 1

t

1 , S quar e W av e P ul s e D ur at i on [ s ec ]

25

50

75

100

125

150

0

5

10

15

20

T

C, Case Temperature [

℃

]

10

0

10

1

10

2

10

-1

10

0

10

1

10

2

DC

10 ms

1 ms

100 us

Operation in This Area

is Limited by R

DS(on)

※

Notes :

1. T

C = 25

oC

2. T

J = 150

oC

3. Single Pulse

V

DS, Drain-Source Voltage [V]

Typical Characteristics

(Continued)

Figure 11. Transient Thermal Response Curve

t1

PDM

t2

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※

Notes :

1. V

GS = 10 V

2. I

D = 7.5 A

T

J, Junction Temperature [

oC]

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

※

Notes :

1. V

GS = 0 V

2. I

D = 250

μ

A

T

J, Junction Temperature [

oC]

Figure 9. Maximum Safe Operating Area

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

Figure 10. Maximum Drain Current

vs. Case Temperature

FQD18N20V2 / FQU18N20V2 Rev. C0

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VBsemi Electronics Co.,...	FQD18N20V2TM	1,010Kb / 7P	N-Channel 200 V (D-S) MOSFET

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