データシートサーチシステム |
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HUFA75852G3 データシート(PDF) 4 Page - Fairchild Semiconductor |
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HUFA75852G3 データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 10 page ©2001 Fairchild Semiconductor Corporation HUFA75852G3 Rev. B FIGURE 5. FORWARD BIAS SAFE OPERATING AREA NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. SATURATION CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE Typical Performance Curves (Continued) 10 100 10 500 1000 1 1 100 µs 10ms 1ms VDS, DRAIN TO SOURCE VOLTAGE (V) LIMITED BY rDS(ON) AREA MAY BE OPERATION IN THIS TJ = MAX RATED TC = 25 oC SINGLE PULSE 100 100 1000 0.01 0.1 1 10 tAV, TIME IN AVALANCHE (ms) tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R = 0 If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] STARTING TJ = 25 oC STARTING TJ = 150 oC 10 0 50 100 150 200 23 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VDD = 15V TJ = 175 oC TJ = 25 oC TJ = -55 oC 50 100 150 200 01 2 3 6 0 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS =5V VGS = 20V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX TC = 25 oC VGS = 10V VGS = 7V VGS = 6V 45 0.4 1.0 1.6 2.2 2.8 -80 -40 0 40 80 120 200 TJ, JUNCTION TEMPERATURE ( oC) VGS = 10V, ID = 75A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 160 0.4 0.8 1.0 1.2 -80 -40 0 40 80 120 200 TJ, JUNCTION TEMPERATURE ( oC) VGS = VDS, ID = 250µA 0.6 160 HUFA75852G3 |
同様の部品番号 - HUFA75852G3 |
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同様の説明 - HUFA75852G3 |
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