データシートサーチシステム |
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HUFA76423D3S データシート(PDF) 4 Page - Fairchild Semiconductor |
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HUFA76423D3S データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 10 page ©2001 Fairchild Semiconductor Corporation HUFA76423D3, HUFA76423D3S Rev. B FIGURE 5. FORWARD BIAS SAFE OPERATING AREA NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. SATURATION CHARACTERISTICS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 10. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE Typical Performance Curves (Continued) 10 100 110 100 1 300 100 µs 10ms 1ms VDS, DRAIN TO SOURCE VOLTAGE (V) LIMITED BY rDS(ON) AREA MAY BE OPERATION IN THIS TJ = MAX RATED TC = 25 oC SINGLE PULSE 10 0.01 0.1 1 100 1 200 tAV, TIME IN AVALANCHE (ms) tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R = 0 If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] STARTING TJ = 25 oC STARTING TJ = 150 oC 100 100 10 10 20 30 40 60 2.0 2.5 3.0 3.5 4.0 5.0 0 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VDD = 15V TJ = 175 oC TJ = 25 oC TJ = -55 oC 4.5 50 10 10 20 30 40 60 01 2 3 4 0 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 3V VGS = 3.5V VGS = 5V VGS = 10V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX TC = 25 oC VGS = 4V 50 30 40 50 246 8 10 ID = 10A VGS, GATE TO SOURCE VOLTAGE (V) ID = 20A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX TC = 25 oC 20 1.0 1.5 2.0 2.5 -80 -40 0 40 80 120 160 200 0.5 TJ, JUNCTION TEMPERATURE ( oC) VGS = 10V, ID = 20A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX HUFA76423D3, HUFA76423D3S |
同様の部品番号 - HUFA76423D3S |
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同様の説明 - HUFA76423D3S |
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