データシートサーチシステム |
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HUFA76432P3 データシート(PDF) 4 Page - Fairchild Semiconductor |
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HUFA76432P3 データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 10 page ©2001 Fairchild Semiconductor Corporation HUFA76432P3, HUFA76432S3S Rev. B FIGURE 5. FORWARD BIAS SAFE OPERATING AREA NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. SATURATION CHARACTERISTICS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 10. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE Typical Performance Curves (Continued) 10 100 10 100 400 1 1 100 µs 10ms 1ms VDS, DRAIN TO SOURCE VOLTAGE (V) LIMITED BY rDS(ON) AREA MAY BE OPERATION IN THIS TC = 25 oC TJ = MAX RATED SINGLE PULSE 10 100 200 0.001 0.01 0.1 1 tAV, TIME IN AVALANCHE (ms) STARTING TJ = 25 oC STARTING TJ = 150 oC tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R = 0 If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 0 10 20 30 40 60 1.522.5 33.5 4 VGS, GATE TO SOURCE VOLTAGE (V) TJ= 25 oC PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VDD = 15V 50 TJ= 175 oC TJ= -55 oC 0 10 20 30 40 60 50 0 1234 5 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 3V VGS = 3.5V VGS = 5V VGS = 10V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX TC = 25 oC VGS = 4V ID = 18A 10 20 30 40 50 246 8 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 55A ID = 37A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX TC = 25 oC 0.5 1.0 1.5 2.0 2.5 -80 -40 0 40 80 120 200 TJ, JUNCTION TEMPERATURE ( oC) VGS = 10V, ID = 59A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 160 HUFA76432P3, HUFA76432S3S |
同様の部品番号 - HUFA76432P3 |
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同様の説明 - HUFA76432P3 |
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