HUFA76619D3S datasheet(1/10 Pages) FAIRCHILD

部品番号	HUFA76619D3S

部品情報	18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

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メーカー	FAIRCHILD [Fairchild Semiconductor]

ホームページ	http://www.fairchildsemi.com

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HUFA76619D3, HUFA76619D3S Rev. B

HUFA76619D3, HUFA76619D3S

18A, 100V, 0.087 Ohm, N-Channel, Logic

Level UltraFET® Power MOSFET

Packaging

Symbol

Features

• Ultra Low On-Resistance

-rDS(ON) = 0.085Ω, VGS = 10V

-rDS(ON) = 0.087Ω, VGS = 5V

• Simulation Models

- Temperature Compensated PSPICE® and SABER™

Electrical Models

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Switching Time vs RGS Curves

Ordering Information

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Specified

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy

of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

JEDEC TO-251AA

JEDEC TO-252AA

DRAIN

(FLANGE)

DRAIN

SOURCE

HUFA76619D3

GATE

HUFA76619D3S

GATE

SOURCE

DRAIN

(FLANGE)

D

G

S

PART NUMBER

PACKAGE

BRAND

HUFA76619D3

TO-251AA

76619D

HUFA76619D3S

TO-252AA

76619D

NOTE: When ordering, use the entire part number. Add the suffix T to

obtain the TO-252AA variant in tape and reel, e.g., HUFA76619D3ST.

HUFA76619D3, HUFA76619D3S

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

100

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

100

V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±16

V

Drain Current

Continuous (TC = 25

oC, V

GS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TC = 25

oC, V

GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TC = 100

oC, V

GS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TC = 100

oC, V

GS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

18

12

Figure 4

A

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS

Figures 6, 17, 18

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

75

0.5

W

W/oC

Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 175

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

oC

NOTES:

1. TJ = 25

oC to 150oC.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Data Sheet

January 2002

同様の部品番号 - HUFA76619D3S

メーカー	部品番号	データシート	部品情報
Fairchild Semiconductor	HUFA76609D3	209Kb / 10P	10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
VBsemi Electronics Co.,...	HUFA76609D3	1Mb / 7P	N-Channel 100 V (D-S) MOSFET
Fairchild Semiconductor	HUFA76609D3S	209Kb / 10P	10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
	HUFA76629D3	203Kb / 10P	20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
	HUFA76629D3S	203Kb / 10P	20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

More results

同様の説明 - HUFA76619D3S

メーカー	部品番号	データシート	部品情報
Fairchild Semiconductor	HUF76619D3	215Kb / 10P	18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Intersil Corporation	HUF76619D3	108Kb / 9P	18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Fairchild Semiconductor	HUF76633P3	218Kb / 10P	38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
	HUFA76629D3	203Kb / 10P	20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
	HUF76629D3	203Kb / 10P	20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Intersil Corporation	HUF76629D3	334Kb / 9P	20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Intersil Corporation	HUF76633P3	337Kb / 9P	38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Fairchild Semiconductor	HUFA76639P3	219Kb / 10P	50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
	HUFA76609D3	209Kb / 10P	10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
	HUFA76633P3	218Kb / 10P	38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET