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IRFW820B データシート(PDF) 4 Page - Fairchild Semiconductor |
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IRFW820B データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 9 page ©2001 Fairchild Semiconductor Corporation Rev. B, November 2001 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 DC 10 ms 1 ms 100 µs Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse V DS, Drain-Source Voltage [V] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 0 ※ No te s : 1 . Z θ JC (t) = 2 . 5 7 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T JM - T C = P DM * Z θ JC (t) s in g le p u ls e D= 0 .5 0. 02 0. 2 0. 05 0. 1 0. 01 t 1 , S q uar e W a v e P u ls e D u r a tio n [s ec ] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 T C , Case Temperature [℃] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ※ Notes : 1. V GS = 10 V 2. I D = 1.25 A T J, Junction Temperature [ o C] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※Notes: 1. V GS = 0 V 2. I D = 250 μ A T J, Junction Temperature [ o C] Typical Characteristics (Continued) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Figure 11. Transient Thermal Response Curve t 1 PDM t 2 |
同様の部品番号 - IRFW820B |
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同様の説明 - IRFW820B |
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