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IRFW830B データシート(PDF) 3 Page - Fairchild Semiconductor |
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IRFW830B データシート(HTML) 3 Page - Fairchild Semiconductor |
3 / 9 page Rev. B, November 2001 ©2001 Fairchild Semiconductor Corporation 0 4 8 1216 202428 0 2 4 6 8 10 12 V DS = 250V V DS = 100V V DS = 400V ※ Note: I D = 4.5 A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 0 300 600 900 1200 1500 1800 C oss C iss = Cgs + Cgd (Cds = shorted) C oss = C ds + C gd C rss = Cgd ※ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C iss V DS, Drain-Source Voltage [V] 0 3 6 9 12 15 1 2 3 4 5 6 V GS = 20V V GS = 10V ※ Note : T J = 25℃ I D, Drain Current [A] 24 68 10 10 -1 10 0 10 1 150 oC 25 o C -55 o C ※ Notes : 1. V DS = 40V 2. 250μ s Pulse Test V GS, Gate-Source Voltage [V] 10 -1 10 0 10 1 10 -1 10 0 10 1 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom: 5.0 V ※ Notes : 1. 250μ s Pulse Test 2. T C = 25 ℃ V DS, Drain-Source Voltage [V] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150℃ ※ Notes : 1. V GS = 0V 2. 250μ s Pulse Test 25℃ V SD, Source-Drain voltage [V] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics |
同様の部品番号 - IRFW830B |
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同様の説明 - IRFW830B |
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