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データシートサーチシステム |
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データシートサーチシステム |
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KSB708 データシート(PDF) 1 Page - Fairchild Semiconductor |
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KSB708 データシート(HTML) 1 Page - Fairchild Semiconductor |
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1 / 4 page  ©2000 Fairchild Semiconductor International Rev. A, February 2000 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted * PW ≤300µs, Duty Cycle≤10% Electrical Characteristics T C=25°C unless otherwise noted * Pulse Test: PW ≤350µs, Duty Cycle≤2% hFE Cassification Symbol Parameter Value Units VCBO Collector-Base Voltage - 80 V VCEO Collector-Emitter Voltage : B707 : B708 - 60 - 80 V V VEBO Emitter-Base Voltage - 7.0 V IC Collector Current (DC) - 7.0 A ICP *Collector Current (Pulse) - 15 A IB Base Current (DC) - 3.5 A PC Collector Dissipation (TC=25°C) 40 W PC Collector Dissipation (Ta=25°C) 1.5 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Typ. Max. Units ICBO Collector Cut-off Current VCB = - 60V, IE = 0 - 10 µA IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 10 µA hFE1 hFE2 * DC Current Gain VCE = - 1V, IC = - 3A VCE = - 1V, IC = - 5A 40 20 200 VCE(sat) * Collector-Emitter Saturation Voltage IC = - 5A, IB = - 0.5A - 0.5 V VBE(sat) * Base-Emitter Saturation Voltage IC = - 5A, IB = - 0.5A - 1.5 V Classification R O Y hFE1 40 ~ 80 60 ~ 120 100 ~ 200 KSB707/708 Low Frequency Power Amplifier • Low Speed Switching • Industrial Use • Complement to KSD568/569 1.Base 2.Collector 3.Emitter 1 TO-220 |
同様の部品番号 - KSB708 |
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同様の説明 - KSB708 |
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