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PZTA92T1G データシート(PDF) 1 Page - ON Semiconductor |
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PZTA92T1G データシート(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 9 1 Publication Order Number: PZTA92T1/D PZTA92T1G High Voltage Transistor PNP Silicon Features • Complement to PZTA42T1G • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCEO −300 Vdc Collector−Base Voltage VCBO −300 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current IC −500 mAdc Total Power Dissipation up to @ TA = 25°C (Note 1) PD 1.5 W Storage Temperature Range Tstg − 65 to +150 °C Junction Temperature TJ 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 83.3 °C/W 2. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in. SOT−223 CASE 318E STYLE 1 MARKING DIAGRAM SOT−223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT 1 2 3 4 1 AYW P2D G G P2D = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) http://onsemi.com COLLECTOR 2,4 BASE 1 EMITTER 3 Device Package Shipping† ORDERING INFORMATION PZTA92T1G SOT−223 (Pb−Free) 1,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. |
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同様の説明 - PZTA92T1G |
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