データシートサーチシステム
  Japanese  ▼
ALLDATASHEET.JP

X  

IRF1404ZL データシート(PDF) 2 Page - Kersemi Electronic Co., Ltd.

部品番号 IRF1404ZL
部品情報  AUTOMOTIVE MOSFET Advanced Process Technology
Download  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
メーカー  KERSEMI [Kersemi Electronic Co., Ltd.]
ホームページ  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

IRF1404ZL データシート(HTML) 2 Page - Kersemi Electronic Co., Ltd.

  IRF1404ZL Datasheet HTML 1Page - Kersemi Electronic Co., Ltd. IRF1404ZL Datasheet HTML 2Page - Kersemi Electronic Co., Ltd. IRF1404ZL Datasheet HTML 3Page - Kersemi Electronic Co., Ltd. IRF1404ZL Datasheet HTML 4Page - Kersemi Electronic Co., Ltd. IRF1404ZL Datasheet HTML 5Page - Kersemi Electronic Co., Ltd. IRF1404ZL Datasheet HTML 6Page - Kersemi Electronic Co., Ltd. IRF1404ZL Datasheet HTML 7Page - Kersemi Electronic Co., Ltd. IRF1404ZL Datasheet HTML 8Page - Kersemi Electronic Co., Ltd. IRF1404ZL Datasheet HTML 9Page - Kersemi Electronic Co., Ltd. Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 12 page
background image
IRF1404ZS_L
2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
∆V
(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.033
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
2.7
3.7
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
170
–––
–––
V
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
Gate-to-Source Reverse Leakage
–––
–––
-200
Qg
Total Gate Charge
–––
100
150
Qgs
Gate-to-Source Charge
–––
31
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
42
–––
td(on)
Turn-On Delay Time
–––
18
–––
tr
Rise Time
–––
110
–––
td(off)
Turn-Off Delay Time
–––
36
–––
ns
tf
Fall Time
–––
58
–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
4340
–––
Coss
Output Capacitance
–––
1030
–––
Crss
Reverse Transfer Capacitance
–––
550
–––
pF
Coss
Output Capacitance
–––
3300
–––
Coss
Output Capacitance
–––
920
–––
Coss eff.
Effective Output Capacitance
–––
1350
–––
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
75
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
750
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
28
42
ns
Qrr
Reverse Recovery Charge
–––
34
51
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = 25V, ID = 75A
ID = 75A
VDS = 32V
Conditions
VGS = 10V
e
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 20V
VGS = -20V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 75A, VGS = 0V e
TJ = 25°C, IF = 75A, VDD = 20V
di/dt = 100A/µs
e
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 75A
e
VDS = VGS, ID = 250µA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
f
VGS = 10V
e
VDD = 20V
ID = 75A
RG = 3.0 Ω
www.kersemi.com


同様の部品番号 - IRF1404ZL

メーカー部品番号データシート部品情報
logo
International Rectifier
IRF1404ZL IRF-IRF1404ZL Datasheet
306Kb / 12P
   Advanced Process Technology
IRF1404ZL IRF-IRF1404ZL Datasheet
294Kb / 12P
   Advanced Process Technology
IRF1404ZLPBF IRF-IRF1404ZLPBF Datasheet
329Kb / 12P
   AUTOMOTIVE MOSFET
IRF1404ZLPBF IRF-IRF1404ZLPBF Datasheet
307Kb / 12P
   Advanced Process Technology
IRF1404ZLPBF IRF-IRF1404ZLPBF Datasheet
307Kb / 12P
   Advanced Process Technology
More results

同様の説明 - IRF1404ZL

メーカー部品番号データシート部品情報
logo
Kersemi Electronic Co.,...
IRF2807Z KERSEMI-IRF2807Z Datasheet
4Mb / 12P
   AUTOMOTIVE MOSFET Advanced Process Technology
logo
Silikron Semiconductor ...
BSS138W SILIKRON-BSS138W Datasheet
469Kb / 6P
   Advanced MOSFET process technology
SSF1090D SILIKRON-SSF1090D Datasheet
441Kb / 8P
   Advanced MOSFET process technology
SSF2129H3 SILIKRON-SSF2129H3 Datasheet
550Kb / 7P
   Advanced MOSFET process technology
SSF3960J7-HF SILIKRON-SSF3960J7-HF Datasheet
548Kb / 7P
   Advanced MOSFET process technology
SSF4004S SILIKRON-SSF4004S Datasheet
518Kb / 8P
   Advanced MOSFET process technology
SSF6007 SILIKRON-SSF6007 Datasheet
509Kb / 6P
   Advanced MOSFET process technology
SSFD4004 SILIKRON-SSFD4004 Datasheet
567Kb / 8P
   Advanced MOSFET process technology
SSFT4003 SILIKRON-SSFT4003 Datasheet
505Kb / 9P
   Advanced MOSFET process technology
SSF6N70G SILIKRON-SSF6N70G Datasheet
457Kb / 8P
   Advanced MOSFET process technology
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


データシート ダウンロード

Go To PDF Page


リンク URL




プライバシーポリシー
ALLDATASHEET.JP
ALLDATASHEETはお客様のビジネスに役立ちますか?  [ DONATE ] 

Alldatasheetは   |   広告   |   お問い合わせ   |   プライバシーポリシー   |   リンク交換   |   メーカーリスト
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com