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FDC8601 データシート(PDF) 1 Page - Fairchild Semiconductor

部品番号 FDC8601
部品情報  N-Channel Shielded Gate PowerTrench짰 MOSFET
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDC8601 データシート(HTML) 1 Page - Fairchild Semiconductor

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May 2013
©2010 Fairchild Semiconductor Corporation
FDC8601 Rev. C1
www.fairchildsemi.com
1
FDC8601
N-Channel
Shielded Gate PowerTrench® MOSFET
100 V, 2.7 A, 109 m
Ω
Features
Shielded Gate MOSFET Technology
Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 2.7 A
Max rDS(on) = 176 mΩ at VGS = 6 V, ID = 2.1 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used
surface mount package
Fast switching speed
100% UIL Tested
RoHS Compliant
General Description
This
N-Channel
MOSFET
is
produced
using
Fairchild
Semiconductor‘s
advanced
PowerTrench®
process
that
incorporates Shielded Gate technology. This process has been
optimized for rDS(on), switching performance and ruggedness.
Applications
Load Switch
Synchronous Rectifier
Primary Switch
MOSFET Maximum Ratings T
A = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
VDS
Drain to Source Voltage
100
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current -Continuous
(Note 1a)
2.7
A
-Pulsed
12
EAS
Single Pulse Avalanche Energy
(Note 3)
13
mJ
PD
Power Dissipation
(Note 1a)
1.6
W
Power Dissipation
(Note 1b)
0.8
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
RθJC
Thermal Resistance, Junction to Case
30
°C/W
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
78
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
.861
FDC8601
SSOT-6
7 ’’
8 mm
3000 units
SuperSOTTM -6
G
S
D
D
D
D
Pin 1
1
2
3
6
5
4
D
D
G
D
D
S


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