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FDC8601 データシート(PDF) 1 Page - Fairchild Semiconductor |
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FDC8601 データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page May 2013 ©2010 Fairchild Semiconductor Corporation FDC8601 Rev. C1 www.fairchildsemi.com 1 FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A, 109 m Ω Features Shielded Gate MOSFET Technology Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 176 mΩ at VGS = 6 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL Tested RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. Applications Load Switch Synchronous Rectifier Primary Switch MOSFET Maximum Ratings T A = 25 °C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V ID Drain Current -Continuous (Note 1a) 2.7 A -Pulsed 12 EAS Single Pulse Avalanche Energy (Note 3) 13 mJ PD Power Dissipation (Note 1a) 1.6 W Power Dissipation (Note 1b) 0.8 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJC Thermal Resistance, Junction to Case 30 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1a) 78 Device Marking Device Package Reel Size Tape Width Quantity .861 FDC8601 SSOT-6 7 ’’ 8 mm 3000 units SuperSOTTM -6 G S D D D D Pin 1 1 2 3 6 5 4 D D G D D S |
同様の部品番号 - FDC8601 |
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同様の説明 - FDC8601 |
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