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2SC4793M データシート(PDF) 1 Page - Toshiba Semiconductor

部品番号 2SC4793M
部品情報  Power Amplifier Applications
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC4793M データシート(HTML) 1 Page - Toshiba Semiconductor

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2SC4793
2006-11-10
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC4793
Power Amplifier Applications
Driver Stage Amplifier Applications
• High transition frequency: fT = 100 MHz (typ.)
• Complementary to 2SA1837
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
230
V
Collector-emitter voltage
VCEO
230
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1
A
Base current
IB
0.1
A
Ta = 25°C
2.0
Collector power
dissipation
Tc = 25°C
PC
20
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)


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