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AM27C512-255DIB データシート(PDF) 6 Page - Advanced Micro Devices

部品番号 AM27C512-255DIB
部品情報  512 Kilobit (64 K x 8-Bit) CMOS EPROM
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メーカー  AMD [Advanced Micro Devices]
ホームページ  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM27C512-255DIB データシート(HTML) 6 Page - Advanced Micro Devices

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6
Am27C512
mon connection to all devices in the array and
connected to the READ line from the system control
bus. This assures that all deselected memory devices
are in their low-power standby mode and that the out-
put pins are only active when data is desired from a
particular memory device.
System Applications
During the switch between active and standby condi-
tions, transient current peaks are produced on the ris-
ing and falling edges of Chip Enable. The magnitude of
these transient current peaks is dependent on the out-
put capacitance loading of the device. At a minimum, a
0.1 µF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
VCC and VSS to minimize transient effects. In addition,
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on EPROM ar-
rays, a 4.7 µF bulk electrolytic capacitor should be used
between VCC and VSS for each eight devices. The loca-
tion of the capacitor should be close to where the
power supply is connected to the array.
MODE SELECT TABLE
Notes:
1. VH = 12.0 V ± 0.5 V.
2. X = Either VIH or VIL.
3. A1–A8 and A10–15 = VIL
4. See DC Programming Characteristics for VPP voltage during programming.
Mode
CE#
OE#/VPP
A0
A9
Outputs
Read
VIL
VIL
XX
DOUT
Output Disable
X
VIH
X
X
High Z
Standby (TTL)
VIH
X
X
X
High Z
Standby (CMOS)
VCC ± 0.3 V
X
X
X
High Z
Program
VIL
VPP
XX
DIN
Program Verify
VIL
VIL
XX
DOUT
Program Inhibit
VIH
VPP
X
X
High Z
Autoselect
(Note 3)
Manufacturer Code
VIL
VIL
VIL
VH
01h
Device Code
VIL
VIL
VIH
VH
91h


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