BD136 datasheet(1/1 Pages) WINNERJOIN

部品番号	BD136

部品情報	TRANSISTOR (PNP)

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メーカー	WINNERJOIN [SHENZHEN YONGERJIA INDUSTRY CO.,LTD]

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WEJ

ELECTRONIC

CO.,LTD

BD136/BD138/BD140 TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM:

1.25

W (Tamb=25

℃)

Collector current

ICM:

-1.5

A

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

BD136

-45

BD138

-60

Collector-base breakdown voltage

V(BR)CBO

Ic=-

100µA, IE=0

BD140

-80

V

BD136

-45

BD138

-60

Collector-emitter breakdown voltage

V(BR)CEO

Ic=-

30mA, IB=0

BD140

-80

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100µA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-30V, IE=0

-0.1

µA

Emitter cut-off current

IEBO

VEB=-5V, IC=0

-10

µA

hFE(1)

VCE=-2V, IC=-5Ma

25

BD136

40

250

hFE(2)

VCE=-2V, IC=-150mA

BD138

BD140

40

160

DC current gain

hFE(3)

VCE=-2V, IC=-500mA

25

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA, IB=-50mA

-0.5

V

Base-emitter voltage

VBE

VCE=-2V, IC=-500mA

-1

V

CLASSIFICATION OF hFE(2)

Rank

6

10

16

Range

40-100

63-160

100-250

1 2 3

TO-126

1. EMITTER

2. COLLECTOR

3. BASE

BD136/138/140

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RoHS

同様の部品番号 - BD136

メーカー	部品番号	データシート	部品情報
Motorola, Inc	BD136	104Kb / 4P	Plastic Medium Power Silicon PNP Transistor
ON Semiconductor	BD136	42Kb / 4P	Plastic Medium Power Silicon PNP Transistor April, 2005 ??Rev. 12
Foshan Blue Rocket Elec...	BD136	751Kb / 6P	Silicon PNP transistor in a TO-126F Plastic Package.
NXP Semiconductors	BD136	44Kb / 8P	PNP power transistors 1999 Apr 12
KEC(Korea Electronics)	BD136	69Kb / 1P	EPITAXIAL PLANAR PNP TRANSISTOR

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同様の説明 - BD136

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