データシートサーチシステム |
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BTB26-600CWRG データシート(PDF) 2 Page - STMicroelectronics |
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BTB26-600CWRG データシート(HTML) 2 Page - STMicroelectronics |
2 / 12 page Characteristics BTA24, BTB24, BTA25, BTA26, BTB26, T25 2/12 1 Characteristics Table 2. Absolute maximum ratings Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) TOP3 Tc = 105° C 25 A D2PAK / TO-220AB Tc = 100° C RD91 Ins/ TOP3 Ins. Tc = 100° C TO-220AB Ins. Tc = 75° C ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25° C) F = 50 Hz t = 20 ms 250 A F = 60 Hz t = 16.7 ms 260 I²tI²t Value for fusing tp = 10 ms 340 A²s dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 125° C 50 A/µs VDSM/VRSM Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25° C VDRM/VRRM + 100 V IGM Peak gate current tp = 20 µs Tj = 125° C 4 A PG(AV) Average gate power dissipation Tj = 125° C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 ° C Table 3. Electrical characteristics (Tj = 25° C, unless otherwise specified), Snubberless and logic level (3 quadrants) T25, BTA/BTB24...W, BTA25...W, BTA26...W Symbol Test Conditions Quadrant T25 BTA/BTB Unit T2535 CW BW IGT (1) VD = 12 V RL = 33 Ω I - II - III MAX. 35 35 50 mA VGT I - II - III MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125° C I - II - III MIN. 0.2 V IH (2) IT = 500 mA MAX. 50 50 75 mA IL IG = 1.2 IGT I - III MAX. 70 70 80 mA II 80 80 100 dV/dt (2) VD = 67 %VDRM gate open Tj = 125° C MIN. 500 500 1000 V/µs (dI/dt)c (2) Without snubber Tj = 125° C MIN. 13 13 22 A/ms 1. minimum IGT is guaranted at 5% of IGT max. 2. for both polarities of A2 referenced to A1. |
同様の部品番号 - BTB26-600CWRG |
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同様の説明 - BTB26-600CWRG |
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