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PDZ7.5B データシート(PDF) 3 Page - NXP Semiconductors |
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PDZ7.5B データシート(HTML) 3 Page - NXP Semiconductors |
3 / 9 page 2004 Mar 22 3 NXP Semiconductors Product data sheet Voltage regulator diodes PDZ-B series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm. THERMAL CHARACTERISTICS Note 1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF continuous forward current − 200 mA IZSM non-repetitive peak reverse current tp = 100 μs; square wave; Tamb = 25 °C prior to surge see Table 2 Ptot total power dissipation Tamb = 25 °C; note 1; see Fig.2 − 400 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-s) thermal resistance from junction to soldering point 130 K/W Rth(j-a) thermal resistance from junction to ambient note 1 340 K/W |
同様の部品番号 - PDZ7.5B |
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同様の説明 - PDZ7.5B |
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