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PZT751T1 データシート(PDF) 1 Page - Motorola, Inc |
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PZT751T1 データシート(HTML) 1 Page - Motorola, Inc |
1 / 6 page 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data PNP Silicon Planar Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for medium power surface mount applications. • High Current: 2.0 Amp • The SOT–223 Package can be soldered using wave or reflow. • SOT–223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die • Available in 12 mm Tape and Reel Use PZT751T1 to order the 7 inch/1000 unit reel. Use PZT751T3 to order the 13 inch/4000 unit reel. • NPN Complement is PZT651T1 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCEO 60 Vdc Collector–Base Voltage VCBO 80 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current IC 2.0 Adc Total Power Dissipation @ TA = 25°C(1) Derate above 25 °C PD 0.8 6.4 Watts mW/ °C Storage Temperature Range Tstg – 65 to 150 °C Junction Temperature TJ 150 °C DEVICE MARKING ZT751 THERMAL CHARACTERISTICS Thermal Resistance from Junction–to–Ambient in Free Air R θJA 156 °C/W Maximum Temperature for Soldering Purposes Time in Solder Bath TL 260 10 °C Sec 1. Device mounted on a FR–4 glass epoxy printed circuit board using minimum recommended footprint. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. Order this document by PZT751T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA © Motorola, Inc. 1996 PZT751T1 SOT–223 PACKAGE HIGH CURRENT PNP SILICON TRANSISTOR SURFACE MOUNT Motorola Preferred Device CASE 318E-04, STYLE 1 TO-261AA 1 2 3 4 COLLECTOR 2, 4 BASE 1 EMITTER 3 REV 1 |
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