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IRF1404ZGPBF データシート(PDF) 1 Page - International Rectifier |
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IRF1404ZGPBF データシート(HTML) 1 Page - International Rectifier |
1 / 10 page 07/07/10 www.irf.com 1 HEXFET® Power MOSFET VDSS = 40V RDS(on) = 3.7mΩ ID = 75A This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of thisdesign area175°Cjunctionoperatingtemperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. S D G Description l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Halogen-Free Features IRF1404ZGPbF TO-220AB IRF1404ZGPbF Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS (Thermally limited) Single Pulse Avalanche Energyd mJ EAS (Tested ) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Current à A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and TSTG Storage Temperature Range°C Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw i Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.65 RθCS Case-to-Sink, Flat Greased Surface i 0.50 ––– RθJA Junction-to-Ambient i ––– 62 480 320 See Fig.12a, 12b, 15, 16 220 1.5 ± 20 Max. 190 130 750 75 °C/W -55 to + 175 300 (1.6mm from case ) 10 lbf yin (1.1Nym) PD - 96236A |
同様の部品番号 - IRF1404ZGPBF |
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同様の説明 - IRF1404ZGPBF |
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