STP18N65M5 datasheet(8/19 Pages) STMICROELECTRONICS

部品番号	STP18N65M5

部品情報	N-channel 650 V, 0.198 typ., 15 A MDmesh V Power MOSFET in TO-220FP, IPAK, TO-220 and TO-247 packages

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Electrical characteristics

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5

8/19

Doc ID 022879 Rev 3

Figure 14.

Normalized gate threshold voltage

vs temperature

Figure 15.

Normalized on-resistance vs

temperature

Figure 16.

Drain-source diode forward

characteristics

Figure 17.

Normalized BVDSS vs temperature

Figure 18.

Switching losses vs gate resistance

(1)

1.

Eon including reverse recovery of a SiC diode

VGS(th)

1.00

0.90

0.80

0.70

-50

0

TJ(°C)

(norm)

-25

1.10

75

25

50

100

ID = 250 µA

VDS = VGS

AM12471v1

RDS(on)

1.7

1.3

0.9

0.5

-50

0

TJ(°C)

(norm)

-25

75

25

50

100

0.7

1.1

1.5

1.9

2.1

VGS= 10V

ID= 17.5 A

AM12483v1

VSD

0

20

ISD(A)

(V)

10

50

30

40

0

0.2

0.4

0.6

0.8

1.0

1.2

TJ=-50°C

TJ=150°C

TJ=25°C

AM05461v1

VDS

-50

0

TJ(°C)

(norm)

-25

75

25

50

100

0.92

0.94

0.96

0.98

1.00

1.04

1.06

1.02

ID = 1mA

1.08

AM10399v1

E

0

20

RG(

Ω)

(

μJ)

10

30

20

40

ID=9.5A

VDD=400V

Eon

Eoff

60

VGS=10V

80

100

120

140

160

AM12485v1

同様の部品番号 - STP18N65M5

メーカー	部品番号	データシート	部品情報
Inchange Semiconductor ...	STP18N65M5	295Kb / 2P	Isc N-Channel MOSFET Transistor

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同様の説明 - STP18N65M5

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