IRF22N60 datasheet(6/7 Pages) NELLSEMI

部品番号	IRF22N60

部品情報	N-Channel Power MOSFET

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SEMICONDUCTOR

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Nell High Power Products

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+

-

QG

QGS

QGD

10V

VGS

Charge

Current Regulator

Same Type as D.U.T.

12V

0.2µF

50KΩ

0.3µF

VGS

3mA

D.U.T.

VDS

RD

RG

Current Sampling Resistors

Fig.13b. Gate charge test circuit

Fig.13a. Basic gate charge waveform

•

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple ≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. I SD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

*

+

-

+

-

•

Circuit Layout Considerations

Low Stray lnductance

Ground Plane

Low Leakage lnductance

Current Transformer

dv/dt controlled by RG

Driver same type as D.U.T.

l

controlled by Duty Factor D

SD

" "

D.U.T. -Device Under Test

D.U.T.

RG

VDD

*V

= 5V for Logic Level Devices and 3V for drive devices

GS

Fig.14 Peak diode recovery dv/dt test circuit for N-Channel MOSFET

Fig.12c. Maximum avalanche energy vs.

Drain current

200

600

400

0

Starting Junction temperature, T (°C)

J

25

50

75

100

125

150

800

IRF22N60 Series

lD

TOP

BOTTOM

9.8A

14A

22A

同様の部品番号 - IRF22N60

メーカー	部品番号	データシート	部品情報
Samsung semiconductor	IRF220	209Kb / 5P	N-CHANNEL POWER MOSFETS
Fairchild Semiconductor	IRF220	165Kb / 5P	N-Channel Power MOSFETs, 7A, 150-200V
Intersil Corporation	IRF220	68Kb / 7P	4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs
New Jersey Semi-Conduct...	IRF220	135Kb / 3P	Nanosecond Switching Speeds
Inchange Semiconductor ...	IRF220	48Kb / 2P	High Speed Applications

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同様の説明 - IRF22N60

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