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FQD1N80 データシート(PDF) 1 Page - Fairchild Semiconductor |
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FQD1N80 データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page January 2014 Thermal Characteristics FQD1N80 / FQU1N80 N-Channel QFET® MOSFET 800 V, 1.0 A, 20 Ω Description ©2009 Fairchild Semiconductor Corporation FQD1N80 / FQU1N80 Rev. C2 www.fairchildsemi.com 1 This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 1.0 A, 800 V, RDS(on) = 2̀0 Ω (Max.) @ VGS = 10 V, ID = 0.5 A • Low Gate Charge (Typ. 5.5 nC) • Low Crss (Typ. 2.7 pF) • 100% Avalanche Tested Absolute Maximum Ratings T C = 25°C unless otherwise noted. Symbol Parameter FQD1N80TM / FQU1N80TU Unit RJC Thermal Resistance, Junction to Case, Max. 2.78 oC/W RJA Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. 50 Symbol Parameter FQD1N80TM / FQU1N80TU Unit VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C) 1.0 A - Continuous (TC = 100°C) 0.63 A IDM Drain Current - Pulsed (Note 1) 4.0 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 90 mJ IAR Avalanche Current (Note 1) 1.0 A EAR Repetitive Avalanche Energy (Note 1) 4.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns PD Power Dissipation (TA = 25°C) * 2.5 W Power Dissipation (TC = 25°C) 45 W - Derate above 25°C 0.36 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering, 1/8" from case for 5 seconds 300 °C G D S I-PAK D-PAK G S D G S D |
同様の部品番号 - FQD1N80 |
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同様の説明 - FQD1N80 |
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