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FQD1N80 データシート(PDF) 1 Page - Fairchild Semiconductor

部品番号 FQD1N80
部品情報  N-Channel QFET짰 MOSFET 800 V, 1.0 A, 20 廓
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQD1N80 データシート(HTML) 1 Page - Fairchild Semiconductor

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January 2014
Thermal Characteristics
FQD1N80 / FQU1N80
N-Channel QFET® MOSFET
800 V, 1.0 A, 20 Ω
Description
©2009 Fairchild Semiconductor Corporation
FQD1N80 / FQU1N80 Rev. C2
www.fairchildsemi.com
1
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
• 1.0 A, 800 V, RDS(on) = 2̀0 Ω (Max.) @ VGS = 10 V,
ID = 0.5 A
• Low Gate Charge (Typ. 5.5 nC)
• Low Crss (Typ. 2.7 pF)
• 100% Avalanche Tested
Absolute Maximum Ratings T
C = 25°C unless otherwise noted.
Symbol
Parameter
FQD1N80TM /
FQU1N80TU
Unit
RJC
Thermal Resistance, Junction to Case, Max.
2.78
oC/W
RJA
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
110
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
50
Symbol
Parameter
FQD1N80TM / FQU1N80TU
Unit
VDSS
Drain-Source Voltage
800
V
ID
Drain Current
- Continuous (TC = 25°C)
1.0
A
- Continuous (TC = 100°C)
0.63
A
IDM
Drain Current
- Pulsed
(Note 1)
4.0
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
90
mJ
IAR
Avalanche Current
(Note 1)
1.0
A
EAR
Repetitive Avalanche Energy
(Note 1)
4.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.0
V/ns
PD
Power Dissipation (TA = 25°C) *
2.5
W
Power Dissipation (TC = 25°C)
45
W
- Derate above 25°C
0.36
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering,
1/8" from case for 5 seconds
300
°C
G
D
S
I-PAK
D-PAK
G
S
D
G
S
D


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