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FQD11P06 データシート(PDF) 1 Page - Fairchild Semiconductor |
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FQD11P06 データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page Januray 2014 Thermal Characteristics FQD11P06 / FQU11P06 P-Channel QFET® MOSFET -60 V, -9.4 A, 185 mΩ Description www.fairchildsemi.com 1 This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.. Features • -9.4 A, -60 V, RDS(on) = 185 mΩ (Max.) @ VGS = -10 V, ID = -4.7 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 45 pF) • 100% Avalanche Tested Absolute Maximum Ratings T C = 25°C unless otherwise noted. Symbol Parameter FQD11P06TM / FQU11P06TU Unit VDSS Drain-Source Voltage -60 V ID Drain Current - Continuous (TC = 25°C) -9.4 A - Continuous (TC = 100°C) -5.95 A IDM Drain Current - Pulsed (Note 1) -37.6 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 160 mJ IAR Avalanche Current (Note 1) -9.4 A EAR Repetitive Avalanche Energy (Note 1) 3.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns PD Power Dissipation (TA = 25°C) * 2.5 W Power Dissipation (TC = 25°C) 38 W - Derate above 25°C 0.3 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering, 1/8" from case for 5 seconds 300 °C Symbol Parameter FQD11P06TM / FQU11P06TU Unit RJC Thermal Resistance, Junction to Case, Max. 3.28 oC/W RJA Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. 50 ©2000 Fairchild Semiconductor Corporation FQD11P06 / FQU11P06 Rev. C2 G D S I-PAK D-PAK G S D G S D |
同様の部品番号 - FQD11P06 |
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同様の説明 - FQD11P06 |
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