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FQD11P06 データシート(PDF) 1 Page - Fairchild Semiconductor

部品番号 FQD11P06
部品情報  P-Channel QFET짰 MOSFET -60 V, -9.4 A, 185 m廓
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQD11P06 データシート(HTML) 1 Page - Fairchild Semiconductor

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Januray 2014
Thermal Characteristics
FQD11P06 / FQU11P06
P-Channel QFET® MOSFET
-60 V, -9.4 A, 185 mΩ
Description
www.fairchildsemi.com
1
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications..
Features
• -9.4 A, -60 V, RDS(on) = 185 mΩ (Max.) @ VGS = -10 V,
ID = -4.7 A
• Low Gate Charge (Typ. 13 nC)
• Low Crss (Typ. 45 pF)
• 100% Avalanche Tested
Absolute Maximum Ratings T
C = 25°C unless otherwise noted.
Symbol
Parameter
FQD11P06TM / FQU11P06TU
Unit
VDSS
Drain-Source Voltage
-60
V
ID
Drain Current
- Continuous (TC = 25°C)
-9.4
A
- Continuous (TC = 100°C)
-5.95
A
IDM
Drain Current
- Pulsed
(Note 1)
-37.6
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
160
mJ
IAR
Avalanche Current
(Note 1)
-9.4
A
EAR
Repetitive Avalanche Energy
(Note 1)
3.8
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
-7.0
V/ns
PD
Power Dissipation (TA = 25°C) *
2.5
W
Power Dissipation (TC = 25°C)
38
W
- Derate above 25°C
0.3
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
FQD11P06TM /
FQU11P06TU
Unit
RJC
Thermal Resistance, Junction to Case, Max.
3.28
oC/W
RJA
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
110
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
50
©2000 Fairchild Semiconductor Corporation
FQD11P06 / FQU11P06 Rev. C2
G
D
S
I-PAK
D-PAK
G
S
D
G
S
D


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