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BCP53L3 データシート(PDF) 1 Page - Cystech Electonics Corp. |
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BCP53L3 データシート(HTML) 1 Page - Cystech Electonics Corp. |
1 / 7 page CYStech Electronics Corp. Spec. No. : C824L3 Issued Date : 2007.03.29 Revised Date : 2010.09.06 Page No. : 1/7 BCP53L3 CYStek Product Specification General Purpose PNP Epitaxial Planar Transistor BCP53L3 Description General purpose mainly intended for use in medium power industrial application and for audio amplifier output stage. Features • High collector current and low VCE(SAT) • Complement to BCP56L3 • Pb-free package Symbol Outline BCP53L3 SOT-223 B:Base C:Collector E:Emitter B C E Absolute Maximum Ratings (Ta=25 °C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -5 V Collector Current(DC) IC -1 A Collector Current(Pulse) ICP -1.5 A Power Dissipation @TC=25℃ Pd 2 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C |
同様の部品番号 - BCP53L3 |
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同様の説明 - BCP53L3 |
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