December 2013

Thermal Characteristics

FQP6N80C / FQPF6N80C

800 V, 5.5 A, 2.5 Ω

Description

©2003 Fairchild Semiconductor Corporation

FQP6N80C / FQPF6N80C Rev. C1

www.fairchildsemi.com

1

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance

and high avalanche energy strength. These devices are

suitable for switched mode power supplies, active power

factor correction (PFC), and electronic lamp ballasts.

Features

• Low Gate Charge (Typ. 21 nC)

• Low Crss (Typ. 8 pF)

• 100% Avalanche Tested

Symbol

Parameter

FQP6N80C

FQPF6N80C /

FQPF6N80CT

Unit

Thermal Resistance, Junction-to-Case, Max.

0.79

2.45

°C/W

Thermal Resistance, Case-to-Sink Typ, Max.

0.5

--

°C/W

Thermal Resistance, Junction-to-Ambient, Max.

62.5

62.5

°C/W

TO-220

GD

S

TO-220F

G

DS

G

S

D

* Drain current limited by maximum junction temperature.

Symbol

Parameter

FQP6N80C

FQPF6N80C /

FQPF6N80CT

Unit

Drain-Source Voltage

800

V

Drain Current

5.5

5.5 *

A

3.2

3.2 *

A

Drain Current

- Pulsed

(Note 1)

22

22 *

A

Gate-Source Voltage

±

30

V

Single Pulsed Avalanche Energy

(Note 2)

680

mJ

Avalanche Current

(Note 1)

5.5

A

Repetitive Avalanche Energy

(Note 1)

15.8

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

158

51

W

- Derate above 25°C

1.27

0.41

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum Lead Temperature for Soldering,

1/8" from Case for 5 Seconds.

300

°C