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OP132 データシート(PDF) 3 Page - OPTEK Technologies

部品番号 OP132
部品情報  Hermetic Infrared Emitting Diode
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メーカー  OPTEK [OPTEK Technologies]
ホームページ  http://www.optekinc.com
Logo OPTEK - OPTEK Technologies

OP132 データシート(HTML) 3 Page - OPTEK Technologies

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OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. —
1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue B
10/2012
Page 3 of 4
Hermetic Infrared Emitting Diode
OP130 Series
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Storage Temperature Range
-65o C to +150o C
Reverse Voltage
2.0 V
Continuous Forward Current
100 mA
Peak Forward Current (2 us pulse width, 0.1% duty cycle)
10.0 A
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
260° C(1)(2)
Power Dissipation
200 mW(3)
Operating Temperature Range
-65o C to +125o C
Notes:
1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
2. Derate linearly 2.0 mW/° C above 25° C.
3. Measurement made with 100 µs pulse measured at the trailing edge of the pulse with a duty cycle of 0.1% and an IF = 100 mA.
Electrical Characteristics (TA = 25°C unless otherwise noted)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Input Diode
PO
Radiant Power Output
OP130, OP130W
OP131, OP131W
OP132, OP132W
OP133, OP133W
1.0
3.0
4.0
5.0
-
-
-
-
-
-
-
-
mW
IF = 100 mA
(3 )
VF
Forward Voltage
-
-
1.75
V
IF = 100 mA
(3)
IR
Reverse Current
-
-
100
µA
VR= 2.0 V
λP
Wavelength at Peak Emission
-
935
-
nm
IF = 10 mA
β
Spectral Bandwidth between Half Power
Points
-
50
-
nm
IF = 10 mA
Electrical Characteristics (TA = 25°C unless otherwise noted — for reference only)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Input Diode
∆λP /∆T
Spectral Shift with Temperature
-
+0.30
-
nm/°C IF = Constant
θHP
Emission Angle at Half Power Points
OP130 series
OP130W series
-
-
18
50
-
-
Degree
I
F = 100 mA
tr
Output Rise Time
-
1000
-
ns
IF(PK)=100 mA, PW=10 µs, and
D.C.=10.0%
tf
Output Fall Time
-
500
-
ns


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