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CAS300M12BM2 データシート(PDF) 2 Page - Cree, Inc |
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CAS300M12BM2 データシート(HTML) 2 Page - Cree, Inc |
2 / 8 page 2 Electrical Characteristics (TC = 25°C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Notes Min Typ Max V(BR)DSS Drain – Source Breakdown Voltage 1.2 kV VGS = 0 V, IDS = 1 mA VGS(th) Gate Threshold Voltage 2.0 2.3 V VDS = 10 V, IDS = 15 mA Fig 11 IDSS Zero Gate Voltage Drain Current 500 2000 µA VDS = 1.2 kV, VGS = 0 V 1000 VDS = 1.2 kV, VGS = 0 V TJ = 150 °C IGSS Gate-Source Leakage Current 1 100 nA VGS = 20 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 5.0 5.7 m Ω VGS = 20 V, IDS = 300 A Fig 4, 5 and 6 8.6 9.8 VGS = 20 V, IDS = 300 A, TJ = 150 °C gfs Transconductance 94.8 S VDS = 20 V, IDS = 300 A Fig 7 93.3 VDS = 20 V, IDS = 300 A, TJ = 150 °C CISS Input Capacitance 11.7 nF VDS = 600 V f = 200 kHz, VAC = 25 mV Fig 17, 18 COSS Output Capacitance 2.55 CRSS Reverse Transfer Capacitance 0.07 td(on) Turn-On Delay Time 76 VDD = 600 V, VGS = -5/20 V ID = 300 A, RG(ext) = 2.5 Ω, Timing relative to VDS Per IEC60747-8-4 pg 83 Inductive Load Fig 24 tr Rise Time 68 td(off) Turn-Off Delay Time 168 tf Fall Time 43 EON Turn-On Switching Energy 6.05 mJ VDS = 600 V, VGS = -5 / 20 V IDS = 300 A, RG = 2.5 Ω, Inductive Load Fig 25 EOFF Turn-Off Switching Energy 5.95 Free-Wheeling Diode Characteristics Symbol Parameter Value Unit Test Conditions Notes Min Typ Max VSD Diode Forward Voltage 1.7 2.0 V ISD = 300 A, TJ = 25°C, VGS = 0 V Fig 8, 9 and 10 2.2 2.5 V ISD = 300 A, TJ = 150°C, VGS = 0 V QC Total Capacitive Charge 3.2 µC Note: The reverse recovery is purely capacitive. Gate Charge Characteristics Symbol Parameter Value Unit Test Conditions Notes Min Typ Max QGS Gate to Source Charge 166 nC VDS = 800 V, VGS = -5 /+ 20 V IDS = 300 Amps Per JEDEC24 pg 27 Fig 12 QGD Gate to Drain Charge 475 QG Total Gate Charge 1025 RG Internal Gate Resistance 3.0 Ω f = 200 kHz, VAC = 25 mV Thermal Characteristics Symbol Parameter Value Unit Test Conditions Notes Min Typ Max RθJCM Thermal Resistance Junction to Case for MOSFET 0.070 0.075 °C/W TC = 90 °C, Tj =150 °C Pdis = Pmax Fig 17 RθJCD Thermal Resistance Junction to Case for Diode 0.073 0.076 Fig 18 |
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