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MTB02N03Q8 データシート(PDF) 5 Page - Cystech Electonics Corp. |
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MTB02N03Q8 データシート(HTML) 5 Page - Cystech Electonics Corp. |
5 / 9 page CYStech Electronics Corp. Spec. No. : C575Q8 Issued Date : 2012.01.18 Revised Date : Page No. : 5/9 MTB02N03Q8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.8 1 1.2 1.4 1.6 1.8 2 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) ID=250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 0 2 4 6 8 10 0 20406080 100 120 Qg, Total Gate Charge(nC) VDS=15V ID=25A Maximum Safe Operating Area 0.1 1 10 100 1000 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) DC 10ms 100m 1ms 100μs 10μs RDS(ON) Limit TA=25°C, Tj=150°C,VGS=10V Maximum Drain Current vs Case Temperature 0 5 10 15 20 25 30 25 50 75 100 125 150 175 T j, Junction Temperature(°C) TA=25°C VGS=10V |
同様の部品番号 - MTB02N03Q8 |
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同様の説明 - MTB02N03Q8 |
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