MTB05N03HQ8 datasheet(2/8 Pages) CYSTEKEC

部品番号	MTB05N03HQ8

部品情報	N-Channel Logic Level Enhancement Mode Power MOSFET

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メーカー	CYSTEKEC [Cystech Electonics Corp.]

ホームページ	http://www.cystekec.com

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CYStech Electronics Corp.

Spec. No. : C738Q8

Issued Date : 2009.08.19

Revised Date : 2011.10.03

Page No. : 2/8

MTB05N03HQ8

CYStek Product Specification

Absolute Maximum Ratings (Tc=25

°C, unless otherwise noted)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

VDS

30

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current @ TC=25

°C

20

Continuous Drain Current @ TC=100

°C

ID

13

Pulsed Drain Current

IDM

80 *1

Avalanche Current

IAS

20

A

Avalanche Energy @ L=0.1mH, ID=20A, RG=25Ω

EAS

20

Repetitive Avalanche Energy @ L=0.05mH

EAR

10 *2

mJ

TA=25℃

3

*3

Total Power Dissipation

TA=100℃

PD

1.5

W

Operating Junction and Storage Temperature Range

Tj, Tstg

-55~+175

°C

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-case, max

Rth,j-c

25

°C/W

Thermal Resistance, Junction-to-ambient, max

Rth,j-a

50 *3

°C/W

Note : 1. Pulse width limited by maximum junction temperature

2. Duty cycle≤1%

3. Surface mounted on 1 in² copper pad of FR-4 board, 125

°C/W when mounted on minimum copper pad

Characteristics (TC=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

30

-

V

VGS=0, ID=250μA

VGS(th)

1

1.5

3

V

VDS = VGS, ID=250μA

GFS *1

-

28

-

S

VDS =5V, ID=20A

IGSS

-

±

100

nA

VGS=±20

-

1

VDS =24V, VGS =0

IDSS

-

25

μA

VDS =20V, VGS =0, TJ=125

°C

ID(ON) *1

20

-

A

VDS =10V, VGS =10V

-

3.9

5

mΩ

VGS =10V, ID=20A

RDS(ON) *1

-

7.1

9

mΩ

VGS =4.5V, ID=15A

Dynamic

Ciss

-

2935

-

Coss

-

217

-

Crss

-

142

-

pF

VGS=0V, VDS=15V, f=1MHz

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MTB05N03HQ8 データシート(PDF) 2 Page - Cystech Electonics Corp.

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