MTB09P03J3 datasheet(2/9 Pages) CYSTEKEC

部品番号	MTB09P03J3

部品情報	P-Channel Logic Level Enhancement Mode Power MOSFET

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メーカー	CYSTEKEC [Cystech Electonics Corp.]

ホームページ	http://www.cystekec.com

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CYStech Electronics Corp.

Spec. No. : C808J3

Issued Date : 2010.01.18

Revised Date : 2013.12.26

Page No. : 2/9

MTB09P03J3

CYStek Product Specification

Absolute Maximum Ratings (TC=25

°C, unless otherwise noted)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

VDS

-30

Gate-Source Voltage

VGS

±

20

V

Continuous Drain Current @ TC=25

°C

ID

-75

Continuous Drain Current @ TC=100

°C

ID

-48

Pulsed Drain Current *1

IDM

-160

Avalanche Current

IAS

-20

A

Avalanche Energy @ L=0.1mH, ID=-20A, RG=25Ω

EAS

20

mJ

Total Power Dissipation @TC=25℃

93

Total Power Dissipation @TC=100℃

Pd

50

W

Operating Junction and Storage Temperature Range

Tj, Tstg

-55~+150

°C

100% UIS testing in condition of VD=-15V, L=0.1mH, VG=-10V, IL=-15A, Rated VDS=-30V P-Channel

Note : *1

. Pulse width limited by maximum junction temperature

*2. Duty cycle ≤ 1%

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-case, max

Rth,j-c

1.34

°C/W

Thermal Resistance, Junction-to-ambient, max

Rth,j-a

50 (Note)

°C/W

Thermal Resistance, Junction-to-ambient, max

Rth,j-a

110

°C/W

Note : When mounted on the minimum pad size recommended (PCB mount).

Characteristics (Tc=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

-30

-

V

VGS=0V, ID=-250μA

VGS(th)

-1

-1.5

-3

V

VDS =VGS, ID=-250μA

GFS *1

-

37

-

S

VDS =-5V, ID=-25A

IGSS

-

±

100

nA

VGS=±20, VDS=0V

-

-1

VDS =-24V, VGS =0V

IDSS

-

-10

μA

VDS =-24V, VGS =0V, Tj=125

°C

-

8

9

VGS =-10V, ID=-25A

RDS(ON) *1

-

11

15

mΩ

VGS =-4.5V, ID=-10A

Dynamic

Qg *1, 2

-

56

-

Qgs *1, 2

-

7.9

-

Qgd *1, 2

-

11.5

-

nC

ID=-25A, VDS=-15V, VGS=-10V

td(ON) *1, 2

-

22

-

tr

*1, 2

-

20

-

td(OFF) *1, 2

-

65

-

tf

*1, 2

-

12

-

ns

VDS=-15V, ID=-1A, VGS=-10V,

RG=2.7Ω

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