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BD136-10 データシート(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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BD136-10 データシート(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 2 page BD136 / BD138 / BD140 PNP General Purpose Transistor Elektronische Bauelemente 29-Mar-2012 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector - Base Breakdown Voltage BD136 V(BR)CBO -45 - - V IC= -0.1mA, IE=0 BD138 -60 - - BD140 -80 - - Collector-emitter sustaining voltage 1 BD136 VCEO(SUS) -45 - - V IC= -0.03A, IB=0 BD138 -60 - - BD140 -80 - - Emitter - Base Breakdown Voltage V(BR)EBO -5 - - V IC=0, IE= -0.1mA Collector Cut - Off Current ICBO - - -0.1 µA VCB= -30V, IE= 0 Emitter Cut-Off Current IEBO - - -10 µA VEB= -5V, IC= 0 DC Current Gain 1 hFE 40 - 250 VCE= -2V, IC= -150mA 25 - - VCE= -2V, IC= -5mA 25 - - VCE= -2V, IC= -500mA Collector - Emitter Saturation Voltage 1 VCE(sat) - - -0.5 V IC= -500mA, IB = -50mA Base – Emitter Voltage 1 VBE - - -1 V VCE= -2V, IC= -500mA Note: 1. Pulse test: pulse width ≤350µs, duty cycle≤ 2.0%. |
同様の部品番号 - BD136-10 |
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同様の説明 - BD136-10 |
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