1

10

20

30

1.4

1.2

1

0.8

0.6

0.4

0.2

0

24

21

18

15

12

9

6

3

NF

FEATURES

• VERY LOW NOISE FIGURE:

0.6 dB TYP at 12 GHz

• HIGH ASSOCIATED GAIN:

11.0 dB TYP at 12 GHz

• GATE LENGTH: 0.25

µm

• GATE WIDTH: 200

µm

• HERMETIC METAL/CERAMIC PACKAGE

NE24283B

ULTRA LOW NOISE

PSEUDOMORPHIC HJ FET

(SPACE QUALIFIED)

NOISE FIGURE & ASSOCIATED

GAIN vs. FREQUENCY

Frequency, f (GHz)

DESCRIPTION

The NE24283B is a pseudomorphic Hetero-Junction FET that

uses the junction between Si-doped AlGaAs and undoped

InGaAs to create very high mobility electrons. The device

features mushroom shaped TiAl gates for decreased gate

resistance and improved power handling capabilities. The

mushroom gate also results in lower noise figure and high

associated gain. This device is housed in a solder sealed

hermetic, metal ceramic package for high reliability in space

applications.

NEC's stringent quality assurance and test procedures as-

sure the highest reliability and performance.

PART NUMBER

NE24283B

PACKAGE OUTLINE

83B

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

f = 4 GHz

dB

0.35

f = 12 GHz

dB

0.6

0.7

f = 4 GHz

dB

16.0

f = 12 GHz

dB

10.0

11.0

Output Power at 1 dB Gain Compression Point, f = 12 GHz

dBm

9.5

dBm

11.0

dB

11.8

dB

12.8

mA

15

40

70

µA

V

-2.0

-0.8

-0.2

mS

45

60

µA

0.5

10

Thermal Resistance (Channel-to-Ambient)

°C/W

750

Thermal Resistance (Channel-to-Case)

°C/W

350

Note:

1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually

measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established of the production

line as a "go-no-go" screening tuned for the "generic" type but not for each specimen.

California Eastern Laboratories