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PZTA96ST1G データシート(PDF) 1 Page - ON Semiconductor |
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1 / 3 page © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 5 1 Publication Order Number: PZTA96ST1/D PZTA96ST1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO − 450 Vdc Collector−Base Voltage VCBO − 450 Vdc Emitter−Base Voltage VEBO − 5.0 Vdc Collector Current IC − 500 mAdc Total Power Dissipation Up to TA = 25°C (Note 1) PD 1.5 W Storage Temperature Range Tstg − 65 to +150 °C Junction Temperature TJ 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 83.3 °C 2. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2. ELECTRICAL CHARACTERISTICS (Note 3) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO − 450 − Vdc Collector−Emitter Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CBO − 450 − Vdc Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 − Vdc Collector−Base Cutoff Current (VCB = − 400 Vdc, IE = 0) ICBO − − 0.1 mAdc Emitter−Base Cutoff Current (VBE = − 4.0 Vdc, IC = 0) IEBO − − 0.1 mAdc ON CHARACTERISTICS DC Current Gain (Note 4) (IC = − 10 mAdc, VCE = − 10 Vdc) hFE 50 150 − Saturation Voltages (IC = −20 mAdc, IB = −2.0 mAdc) (IC = −20 mAdc, IB = −2.0 mAdc) VCE(sat) VBE(sat) − − − 0.6 − 1.0 Vdc 3. TA = 25°C unless otherwise noted. 4. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle = 2.0%. http://onsemi.com COLLECTOR 2,4 BASE 1 EMITTER 3 Device Package Shipping† ORDERING INFORMATION SOT−223 (TO−261) CASE 318E STYLE 1 AYW ZTA96 G G 1 2 3 4 PZTA96ST1G SOT−223 (Pb−Free) 1000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 A = Assembly Location Y = Year W = Work Week G = Pb−Free Package MARKING DIAGRAM (Note: Microdot may be in either location) |
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