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PZTA96ST1G データシート(PDF) 1 Page - ON Semiconductor

部品番号 PZTA96ST1G
部品情報  High Voltage Transistor
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

PZTA96ST1G データシート(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 5
1
Publication Order Number:
PZTA96ST1/D
PZTA96ST1G
High Voltage Transistor
PNP Silicon
Features
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
− 450
Vdc
Collector−Base Voltage
VCBO
− 450
Vdc
Emitter−Base Voltage
VEBO
− 5.0
Vdc
Collector Current
IC
− 500
mAdc
Total Power Dissipation Up to
TA = 25°C (Note 1)
PD
1.5
W
Storage Temperature Range
Tstg
− 65 to +150
°C
Junction Temperature
TJ
150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient (Note 2)
RqJA
83.3
°C
2. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
ELECTRICAL CHARACTERISTICS (Note 3)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
− 450
Vdc
Collector−Emitter Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
− 450
Vdc
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
−5.0
Vdc
Collector−Base Cutoff Current
(VCB = − 400 Vdc, IE = 0)
ICBO
− 0.1
mAdc
Emitter−Base Cutoff Current
(VBE = − 4.0 Vdc, IC = 0)
IEBO
− 0.1
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = − 10 mAdc, VCE = − 10 Vdc)
hFE
50
150
Saturation Voltages
(IC = −20 mAdc, IB = −2.0 mAdc)
(IC = −20 mAdc, IB = −2.0 mAdc)
VCE(sat)
VBE(sat)
− 0.6
− 1.0
Vdc
3. TA = 25°C unless otherwise noted.
4. Pulse Test: Pulse Width
≤ 300 ms; Duty Cycle = 2.0%.
http://onsemi.com
COLLECTOR 2,4
BASE
1
EMITTER 3
Device
Package
Shipping
ORDERING INFORMATION
SOT−223 (TO−261)
CASE 318E
STYLE 1
AYW
ZTA96
G
G
1
2
3
4
PZTA96ST1G
SOT−223
(Pb−Free)
1000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
MARKING DIAGRAM
(Note: Microdot may be in either location)


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