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BD131 データシート(PDF) 1 Page - Savantic, Inc. |
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BD131 データシート(HTML) 1 Page - Savantic, Inc. |
1 / 3 page SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD131 DESCRIPTION ··Complement to type BD132 ·With TO-126 package ·High current (Max: 3A) ·Low voltage (Max: 45V) APPLICATIONS ·For general purpose power applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 70 V VCEO Collector-emitter voltage Open base 45 V VEBO Emitter -base voltage Open collector 6 V IC Collector current (DC) 3 A ICM Collector current-Peak 6 A IBM Base current-Peak 0.5 A PT Total power dissipation Tmb660 15 W Tj Junction temperature 150 Tstg Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-a Thermal resistance from junction to ambient 100 K/W Rth j-mb Thermal resistance from junction to mounting base 6 K/W |
同様の部品番号 - BD131 |
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同様の説明 - BD131 |
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