FQD9N25 datasheet(1/10 Pages) FAIRCHILD

部品番号	FQD9N25

部品情報	N-Channel QFET짰 MOSFET 250 V, 7.4A, 420廓

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メーカー	FAIRCHILD [Fairchild Semiconductor]

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October 2013

FQD9N25 / FQU9N25

N-Channel QFET® MOSFET

FQD9N25 / FQU9N25 Rev. C1

www.fairchildsemi.com

1

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to

reduce on-state resistance, and to provide superior

switching performance and high avalanche energy

strength. These devices are suitable for switched mode

power supplies, active power factor correction (PFC), and

electronic lamp ballasts.

Features

G

D

S

I-PAK

D-PAK

G

S

D

G

S

D

Absolute Maximum Ratings T

C = 25

oC unless otherwise noted.

Thermal Characteristics

Symbol

Parameter

Unit

RJC

Thermal Resistance, Junction to Case, Max.

2.27

oC/W

RJA

Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.

110

Thermal Resistance, Junction to Ambient (*1 in2 pad of 2 oz copper), Max.

50

250 V, .4 A,

Ω

Description

• 7.4 A, 250 V, RDS(on) = 420 mΩ (Max.) @VGS = 10 V,

ID = 3.7 A

• Low Gate Charge (Typ. 15.5 nC)

• Low Crss (Typ. 15 pF)

• 100% Avalanche Tested

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Symbol

Parameter

Unit

FQD9N25TM

FQD9N25TM_F080

FQU9N25TU

FQD9N25TM

FQD9N25TM_F080

FQU9N25TU

同様の部品番号 - FQD9N25

メーカー	部品番号	データシート	部品情報
Fairchild Semiconductor	FQD9N25	724Kb / 9P	250V N-Channel MOSFET
Inchange Semiconductor ...	FQD9N25	305Kb / 2P	isc N-Channel MOSFET Transistor 2023-10-08
Fairchild Semiconductor	FQD9N25TM	752Kb / 8P	250V N-Channel MOSFET

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