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Q10RH5 データシート(PDF) 2 Page - Littelfuse |
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Q10RH5 データシート(HTML) 2 Page - Littelfuse |
2 / 9 page 90 Revised: November 1, 2010 05:04 PM ©2010 Littelfuse, Inc Teccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. 10 Amp Standard & Alternistor (High Communitation) Triacs Qxx10xx & Qxx10xHx Series Absolute Maximum Ratings — Standard Triac Symbol Parameter Value Unit I T(RMS) RMS on-state current (full sine wave) Qxx10Ry/ Qxx10Ny T C = 95°C 10 A Qxx10Ly T C = 90°C I TSM Non repetitive surge peak on-state current (full cycle, T J initial = 25°C) f = 50 Hz t = 20 ms 100 A f = 60 Hz t = 16.7 ms 120 I2t I2t Value for fusing t p = 8.3 ms 60 A2s di/dt Critical rate of rise of on-state current I G = 200mA with ≤ 0.1μs rise time f = 120 Hz T J = 125°C 70 A/μs I GTM Peak gate trigger current t p ≤ 10 μs I GT ≤ IGTM T J = 125°C 1.8 A P G(AV) Average gate power dissipation T J = 125°C 0.5 W T stg Storage temperature range -40 to 150 °C T J Operating junction temperature range -40 to 125 °C Absolute Maximum Ratings — Alternistor Triac (3 Quadrants) Symbol Parameter Value Unit I T(RMS) RMS on-state current (full sine wave) Qxx10LHy T C = 90°C 10 A Qxx10RHy/ Qxx10NHy T C = 95°C I TSM Non repetitive surge peak on-state current (full cycle, T J initial = 25°C) f = 50 Hz t = 20 ms 110 A f = 60 Hz t = 16.7 ms 120 I2t I2t Value for fusing t p = 8.3 ms 60 A2s di/dt Critical rate of rise of on-state current f = 120 Hz T J = 125°C 70 A/μs I GTM Peak gate trigger current t p ≤ 10 μs I GT ≤ IGTM T J = 125°C 2.0 A P G(AV) Average gate power dissipation T J = 125°C 0.5 W T stg Storage temperature range -40 to 150 °C T J Operating junction temperature range -40 to 125 °C Electrical Characteristics (T J = 25°C, unless otherwise specified) — Standard Triac Symbol Test Conditions Quadrant Qxx10x4 Qxx10x5 Unit I GT V D = 12V RL = 60 Ω I – II – III IV MAX. 25 50 50 75 (TYP) mA V GT I – II – III MAX. 1.3 V V GD V D = VDRM RL = 3.3 kΩ TJ = 125°C ALL MIN. 0.2 V I H I T = 200mA MAX. 35 50 mA dv/dt V D = VDRM Gate Open TJ = 125°C 400V MIN. 150 225 V/μs 600V 100 200 800V 75 175 V D = VDRM Gate Open TJ = 100°C 1000V 50 150 (dv/dt)c (di/dt)c = 5.4 A/ms T J = 125°C TYP. 2 4 V/μs t gt I G = 2 x IGT PW = 15µs IT = 14.1 A(pk) TYP. 3.0 3.0 μs Note: xx = voltage, x = package, y = sensitivity |
同様の部品番号 - Q10RH5 |
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同様の説明 - Q10RH5 |
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