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2SK2361 データシート(PDF) 1 Page - NEC |
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2SK2361 データシート(HTML) 1 Page - NEC |
1 / 8 page MOS FIELD EFFECT TRANSISTORS DESCRIPTION The 2SK2361/2SK2362 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2361: RDS (on) = 0.9 Ω (VGS = 10 V, ID = 5.0 A) 2SK2362: RDS (on) = 1.0 Ω (VGS = 10 V, ID = 5.0 A) • Low Ciss Ciss = 1050 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage (2SK2361/2SK2362) VDSS 450/500 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID (DC) ±10 A Drain Current (pulse)* ID (pulse) ±40 A Total Power Dissipation (Tc = 25 ˚C) PT1 100 W Total Power Dissipation (TA = 25 ˚C) PT2 3.0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Single Avalanche Current** IAS 10 A Single Avalanche Energy** EAS 142 mJ * PW ≤ 10 µs, Duty Cycle ≤ 1 % ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 2SK2361/2SK2362 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Document No. TC-2502 (O. D. No. TC-8061) Date Published December 1994 P Printed in Japan PACKAGE DIMENSIONS (in millimeter) 1.0±0.2 123 1. Gate 2. Drain 3. Source 4. Fin (Drain) MP-88 4 15.7 MAX. 3.2±0.2 2.8±0.1 0.6±0.1 2.2±0.2 5.45 5.45 4.7 MAX. 1.5 Body Diode Source Drain Gate © 1995 DATA SHEET |
同様の部品番号 - 2SK2361 |
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同様の説明 - 2SK2361 |
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